ITEM SPECIFICS Brand: NEC MPN: UPD416D Type: Dynamic MOS RAM (DRAM) Memory Organization: 16,384 words x 1 bit Package: 16-Pin Ceramic DIP (CDIP-16) Mounting Type: Through Hole Nominal DC Supply Rails: +12 V DC, +5 V DC, −5 V DC Additional Markings: NEC 824, KS21980 L3 Quantity: 1 Condition: New
DESCRIPTION One new NEC UPD416D dynamic RAM IC in a 16-pin ceramic dual inline package with a metal lid. The device stores 16,384 one-bit words. The package carries the additional marking KS21980 L3.
Compatibility: For equipment that specifies the NEC UPD416D, verify the timing requirements, pinout, and all three DC supply rails before installation. Compare the KS21980 L3 marking if your equipment specifies that identifier.
Q&A: Q: What is the memory capacity? A: 16,384 bits, organized as 16,384 words of one bit each.
Q: What DC supplies does this chip require? A: NEC specifies nominal +12 V, +5 V, and −5 V DC rails.
Troubleshooting: If the board fails a memory test, compare the supply rails, row and column strobe timing, and refresh timing with the NEC µPD416 datasheet.
DISCLAIMER Please review all photos and specifications before purchasing, and make sure this part is right for your application. Item is sold as shown in the photos.
LEGAL DISCLAIMER American Industrial Parts Group is not an authorized distributor, reseller, or representative of NEC. All product names, trademarks, brands, and logos are the property of their respective owners and are used for identification purposes only. As an independent reseller, the original manufacturer warranty does not apply.
NEC UPD416D, NEC µPD416D, KS21980 L3, 16K x 1 DRAM, dynamic MOS RAM, ceramic DIP-16, CDIP-16 memory IC, through-hole DRAM
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